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| phototransistor high sensitivity phototransistor S4404-01 1 S4404-01 is a high sensitivity phototransistor molded into a visible-cut plastic package. features applications miniature plastic package with lens visible-cut package high sensitivity: 2.5 ma (1000 lx ) tape start/end mark sensor for vtrs, etc. rotary encoders touch screen absolute maximum ratings (ta=25 c) electrical and optical characteristics (ta=25 c) parameter symbol value unit collector-emitter voltage v ceo 15 v emitter-collector voltage v eco 4v collector current ic 20 ma collector dissipation pc 80 mw operating temperature topr -30 to +85 c storage temperature tstg -40 to +100 c soldering - 260 c, 3 s, at least 2.5 mm away from package surface - parameter symbol condition min. typ. max. unit peak sensitivity wavelength p - 870 - nm photocurrent * ic v ce =5 v, 1000 lx 1.5 2.5 - ma dark current i ceo v ce =15 v, 0 lx - - 100 na collector-emitter saturation voltage v ce (sat) ic=0.5 ma, 1000 lx - - 0.4 v rise time tr v ce =5 v, ic=1 ma r l =100 -630 s fall time tf - 8 30 s * measured with a cie standard ?a? light source at 2856 k www.hamamatsu.com
phototransistor S4404-01 cat. no. kptr1002e02 sep. 2009 dn ! " #$%&' " #$(&' )*++, - .. -//! 0 .. 1 22*342 4 45 0 67849889 : ; $92& 87467647722 <"; $92& 87467648296 ; 0 ; 73+ < = -/> " 3,2+ > !: +99+?4+,2+ ; $2& ,+94*724+,3+ <"; $2& ,+94 *7242*29 @ ; - 1 @; a 2+ 149**22 @ ; $6,& 928*47?84+ <"; $6,& 928*4*3849 < ; - < =b; 2, = - ,299* 0" < ; 774$2& 3, 87 ?2 ++ <"; 774$2& 3, 87 ?2 2+ . ; - . b; * 0 2+ = c @ 0 b? 2>c . ; $66& 2?+?4*,6999 <"; $66& 2?+?47*8??? ! d ; - ! >; e 2* d42?2 62 ; $63& 948+,4+724++ <"; $63& 948+,4+724+2 ; - =b; 2fd *++*+ $ & ; $7,& +*4,784924?77 <"; $7,& +*4,7849 24?62 2 spectral response collector power dissipation vs. ambient temperature dimensional outline (unit: mm) response time measurement circuit directivity kptrb0006ea kpcb0001ea kptra0002ea kptrb0001ea kptrb0001ea (typ. ta=25 c) 1200 1000 800 400 600 0 wavelength (nm) relative sensitivity (%) 20 40 60 80 100 collector power dissipation (mw) ambient temperature (c) 100 80 60 40 20 0 -25 0 25 50 75 100 90 80 70 60 50 30 relative sensitivity 40 90 80 70 60 50 30 40 20 10 0 10 20 80 % 100 % 40 % 60 % (typ. ta=25 c) 20 % 4.3 0.3 (including burr) 4.15 3.0 2.4 r 0.9 0.45 0.6 10 5 10 5 0.45 2.54 0.5 (specified at the lead root) 0.6 0.3 (0.8) (1.2) 1.43 4.43 15 min. 1.4 0002 tolerance unless otherwise noted: 0.2 , 2 shaded area indicates burr. values in parentheses are not guaranteed, but for reference. 1.7 (including burr) 4.6 +0.6 -0.3 emitter collector i f vcc v o r l pulse input tr v o i f 90 % 10 % tf |
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